Dielectric Properties of Al-Nb Amorphous Mixed Oxides
نویسندگان
چکیده
منابع مشابه
investigation of gassing behavior, electric and dielectric properties of different insulating fluids.
ترانسفورماتورهای قدرت از اجزای اصلی شبکه تامین انرژی الکتریکی می باشند که عملکرد قابل اطمینان ترانسفورماتورها یکی از فاکتورهای مهم و تعیین کننده در تامین انرژی الکتریکی محسوب می شود. در نتیجه بررسی و مانیتور عملکرد ترانسفورماتورها در شبکه و همچنین عیب یابی این ترانسفورماتورها غیرقابل اجتناب و ضروری می باشد. به طور کلی عایق های مایع در صنعت فشار قوی کاربردهای متفاوتی دارند که مهمترین وظیفه آنها...
15 صفحه اولStructural and dielectric properties of crystalline and amorphous ZrO2
We first review earlier work in which we computed the first-principles structural, vibrational, and lattice dielectric properties of the cubic, tetragonal, and monoclinic phases of ZrO2 and HfO2. We then discuss two approaches to the construction of realistic models of amorphous ZrO2: a bmelt-and-quenchQ ab-initio molecular dynamics approach, and an bactivation–relaxation techniqueQ. The struct...
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Zirconia ZrO2 and hafnia HfO2 are leading candidates for replacing SiO2 as the gate insulator in complementary metal-oxide semiconductor technology. Amorphous versions of these materials a-ZrO2 and a-HfO2 can be grown as metastable phases on top of a silicon buffer; while they tend to recrystallize during subsequent annealing steps, they would otherwise be of considerable interest because of th...
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Plasmonic glasses composed of metallic inclusions in a host dielectric medium are investigated for their optical properties. Such structures characterized by short-range order can be easily fabricated using bottom-up, self-organization methods and may be utilized in a number of applications, thus, quantification of their properties is important. We show, using T-Matrix calculations of 1D, 2D, a...
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The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2013
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.012311jss